Simultaneous improvement of the dielectric constant and leakage currents of ZrO2 dielectrics by incorporating a highly valent Ta5+ element-Reference-Cited by-同舟云学术

Simultaneous improvement of the dielectric constant and leakage currents of ZrO2 dielectrics by incorporating a highly valent Ta5+ element

Published:2018 Issue:36 Volume:6 Page:9794-9801
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park Bo-Eun¹²³⁴,Oh Il-Kwon¹²³⁴,Park Jong Seo¹²³⁴,Seo Seunggi¹²³⁴,Thompson David⁵⁶⁷,Kim Hyungjun¹²³⁴^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering

2. Yonsei University

3. Seoul

4. Korea

5. Applied Materials

6. Sunnyvale

7. USA

Abstract

Ta doping into ZrO₂ suppresses the oxygen vacancy formation and changes the crystal structure, leading to simultaneous improvement of dielectric constant and leakage currents.

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC03640C

Reference44 articles.

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2. Conduction barrier offset engineering for DRAM capacitor scaling

3. Mesoscopic analysis of leakage current suppression in ZrO2/Al2O3/ZrO2 nano-laminates

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5. Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

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