Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor-Reference-Cited by-同舟云学术

Nanoscale CuO solid-electrolyte-based conductive-bridging-random-access-memory cell operating multi-level-cell and 1selector1resistor

Published:2015 Issue:37 Volume:3 Page:9540-9550
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kwon Kyoung-Cheol¹²³⁴,Song Myung-Jin⁵²⁶⁴,Kwon Ki-Hyun⁵²⁶⁴,Jeoung Han-Vit⁵²⁶⁴,Kim Dong-Won¹²³⁴,Lee Gon-Sub⁵²⁶⁴,Hong Jin-Pyo⁷²⁶⁴,Park Jea-Gun¹²³⁴⁵

Affiliation:

1. Department of Nano-scale Semiconductor Engineering

2. Hanyang University

3. Seoul 133-791

4. Republic of Korea

5. Department of Electronics and Computer Engineering

6. Seoul

7. Department of Physics

Abstract

Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼10²memory margin, ∼3 × 10⁶endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01342A

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