Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory-Reference-Cited by-同舟云学术

Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

Published:2014-02-24 Issue:8 Volume:104 Page:083507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Daeseok,Woo Jiyong,Park Sangsu,Cha Euijun,Lee Sangheon,Hwang Hyunsang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4866671

Reference9 articles.

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5. R. Meyer, L. Schloss, J. Brewer, R. Lambertson, W. Kinney, J. Sanchez, and D. Rinerson, in Proceedings of Non-Volatile Memory Technology Symposium (2008), pp. 54–58.

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