Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations-Reference-Cited by-同舟云学术

Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

Published:2014 Issue:11 Volume:6 Page:5698-5702
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao L.¹²³,Chen H.-Y.¹²³,Wu S.-C.⁴⁵⁶,Jiang Z.¹²³,Yu S.⁷⁸⁹,Hou T.-H.⁴⁵⁶,Wong H.-S. Philip¹²³,Nishi Y.¹²³

Affiliation:

1. Department of Electrical Engineering

2. Stanford University

3. Stanford, USA

4. Department of Electronics Engineering

5. National Chiao Tung University

6. Hsinchu 300, Taiwan

7. Department of Computer Engineering

8. Arizona State University

9. Tempe, USA

Abstract

Improved multi-level control of conductive nano-filaments in HfO₂ ReRAM was achieved by pulse-train operations, which shed light on resistive-switching mechanisms.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR00500G

Reference40 articles.

1. Metal–Oxide RRAM

2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

3. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

4. Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

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