Selective growth of ordered hexagonal InN nanorods-Reference-Cited by-同舟云学术

Selective growth of ordered hexagonal InN nanorods

Published:2019 Issue:16 Volume:21 Page:2702-2708
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Zeghouane Mohammed¹²³⁴⁵^ORCID,Avit Geoffrey¹²³⁴⁵^ORCID,Cornelius Thomas W.⁶⁷²⁸⁹,Salomon Damien¹⁰¹¹⁹,André Yamina¹²³⁴⁵,Bougerol Catherine¹²¹³¹¹⁹,Taliercio Thierry¹⁴¹⁵²¹⁶⁹,Meguekam-Sado Ariane¹⁴¹⁵²¹⁶⁹,Ferret Pierre¹⁷¹⁸⁹,Castelluci Dominique¹²³⁴⁵,Gil Evelyne¹²³⁴⁵,Tournié Eric¹⁴¹⁵²¹⁶⁹,Thomas Olivier⁶⁷²⁸⁹,Trassoudaine Agnès¹²³⁴⁵

Affiliation:

1. Université Clermont Auvergne

2. CNRS

3. SIGMA Clermont

4. Institut Pascal

5. F-63000 Clermont-Ferrand

6. Aix Marseille Univ

7. Univ de Toulon

8. Marseille

9. France

10. European Synchrotron Radiation Facility

11. 38000 Grenoble

12. Université Grenoble-Alpes

13. CNRS-Institut Néel

14. IES

15. Univ. Montpellier

16. Montpellier

17. CEA-DRT LETI/DTS

18. 38054 Grenoble

Abstract

Well-ordered and vertically aligned InN nanorods with high aspect ratios are synthesized by hydride vapor phase epitaxy (HVPE) using the selective area growth (SAG) approach.

Funder

European Synchrotron Radiation Facility

Agence Nationale de la Recherche

European Commission

Centre National de la Recherche Scientifique

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C9CE00161A

Reference46 articles.