Structural and Optical Properties of InN Nanowires Formed on Si(111)-Reference-Cited by-同舟云学术

Structural and Optical Properties of InN Nanowires Formed on Si(111)

Published:2022-10-22 Issue:6 Volume:31 Page:141-144
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Shin Jaehyeok¹^ORCID,Noh Siyun¹^ORCID,Lee Jinseong¹^ORCID,Oh Jaewon²^ORCID,Ryu Mee-Yi²^ORCID,Kim Jin Soo¹^ORCID

Affiliation:

1. Department of Electronic and Information Materials Engineering, Division of Advanced Materials Engineering, and Research Center of Advanced Materials Development, Jeonbuk National University, Jeonju 54896, Republic of Korea

2. Department of Physics, Kangwon National University, Chuncheon 24341, Republic of Korea

Funder

Jeonbuk National University

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous),General Medicine

Link

http://pdf.medrang.co.kr/ASCT/2022/031/ASCT031-06-141.pdf

Reference37 articles.

1. Formation Mechanism of GaN Nanowires with Various Shapes on Si(111)

2. Physical properties of InN with the band gap energy of 1.1eV

3. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

4. Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy

5. D. Khandal and S. Jain, Int. J. Inf. Comput. Technol. 4, 1687 (2014).

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