Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy-Reference-Cited by-同舟云学术

Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy

Published:2023-05-22 Issue:6 Volume:23 Page:4401-4409
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Chereau Emmanuel¹^ORCID,Dubrovskii Vladimir G.²^ORCID,Grégoire Gabin¹^ORCID,Avit Geoffrey¹^ORCID,Staudinger Philipp³,Schmid Heinz³^ORCID,Bougerol Catherine⁴,Coulon Pierre-Marie⁵⁶,Shields Philip A.⁶,Trassoudaine Agnès¹,Gil Evelyne¹,LaPierre Ray R.⁷^ORCID,André Yamina¹

Affiliation:

1. Université Clermont Auvergne, CNRS, Clermont Auvergne INP, Institut Pascal, F-63000 Clermont-Ferrand, France

2. Faculty of Physics, Saint Petersburg State University, Universitetskaya Embankment 13B, 199034 Saint Petersburg, Russia

3. IBM Research Europe─Zürich, Saumerstrasse 4, 8803 Rüschlikon, Switzerland

4. Université Grenoble Alpes, CNRS, Institut Neel, 38000 Grenoble, France

5. Université Côte d’Azur, CNRS, CRHEA, Rue Bernard Gregory, 06560 Valbonne, France

6. Centre for Nanoscience and Nanotechnology & Department of Electronic and Electrical Engineering, University of Bath, BA2 7AY Bath, U.K.

7. Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S4L7, Canada

Funder

Agence Nationale de la Recherche

European Commission

Saint Petersburg State University

Natural Sciences and Engineering Research Council of Canada

H2020 European Research Council

R?gion Auvergne-Rh?ne-Alpes

International Research Center - Innovation Transportation and Production Systems

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00172

Reference58 articles.

1. Electron Mobility in High‐Purity GaAs

2. Single-nanowire solar cells beyond the Shockley–Queisser limit

3. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

4. Optically pumped room-temperature GaAs nanowire lasers

5. GaAs/AlGaAs Nanowire Photodetector

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