A first principles study of H2S adsorption and decomposition on a Ge(100) surface-Reference-Cited by-同舟云学术

A first principles study of H2S adsorption and decomposition on a Ge(100) surface

Published:2015 Issue:5 Volume:5 Page:3825-3832
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Teng Tsung-Fan¹²³⁴⁵,Nachimuthu Santhanamoorthi¹²³⁴,Hung Wei-Hsiu⁵⁶⁷⁴,Jiang Jyh-Chiang¹²³⁴

Affiliation:

1. Department of Chemical Engineering

2. National Taiwan University of Science and Technology

3. Taipei 106

4. Taiwan

5. Department of Chemistry

6. National Taiwan Normal University

7. Taipei 116

Abstract

We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H₂S on a Ge(100) surface.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C4RA08887E

Reference37 articles.

1. Growth mechanism difference of sputtered HfO2 on Ge and on Si

2. Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition

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4. REACTIVITY OF THE GERMANIUM SURFACE: Chemical Passivation and Functionalization

5. Interface characterization of high-k dielectrics on Ge substrates

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