Interface characterization of high-k dielectrics on Ge substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices
2. Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
3. Electrical Characterization of Some Native Insulators on Germanium
4. Plasma anodic oxidation and nitridation of Ge(111) surface
5. High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric
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1. Enhancement of electrical performance of Ge-based metal-oxide-semiconductor capacitor via formation of trigonal-Sm2O3;Surfaces and Interfaces;2021-08
2. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13
3. Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation;Applied Surface Science;2021-04
4. Al2O3/ZrO2/Al2O3 High-k Dielectric Stacks on Germanium Substrates Grown by Atomic Layer Deposition at High and Low Temperatures;ECS Transactions;2019-12-18
5. Frequency and Area Dependence of High-K/Ge MOS Capacitors;ECS Transactions;2017-07-07
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