Uniform growth of SiC single crystal thin films via a metal–Si alloy flux by vapour–liquid–solid pulsed laser deposition: the possible existence of a precursor liquid flux film-Reference-Cited by-同舟云学术

Uniform growth of SiC single crystal thin films via a metal–Si alloy flux by vapour–liquid–solid pulsed laser deposition: the possible existence of a precursor liquid flux film

Published:2016 Issue:1 Volume:18 Page:143-148
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Onuma Aomi¹²³,Maruyama Shingo¹²³^ORCID,Mitani Takeshi⁴⁵,Kato Tomohisa⁴⁵,Okumura Hajime⁴⁵,Matsumoto Yuji¹²³

Affiliation:

1. Department of Applied Chemistry

2. Tohoku University

3. , Japan

4. National Institute of Advanced Industrial Science and Technology

5. Tsukuba, Japan

Abstract

3C-SiC single crystal films were successfully obtained in the PLD-based VLS process with a Si–Ni liquid flux, the interfacial behaviour of which was investigated by in situ high temperature laser microscopy in vacuum.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CE/C5CE01865J

Reference33 articles.

1. Solution Growth of SiC Crystals in Si-Ti and Si-Ge-Ti Solvents

2. Screening of metal flux for SiC solution growth by a thin-film combinatorial method

3. High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

4. Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

5. Micropipe healing in SiC wafers by liquid-phase epitaxy in Si–Ge melts

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