Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope
Author:
Affiliation:
1. Department of Applied Chemistry, School of Engineering, Tohoku University, Sendai 980-8579, Japan
2. National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8569, Japan
Funder
New Energy and Industrial Technology Development Organization
Japan Science and Technology Agency
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b00325
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