Promising Approach for Rapid Growth of High-Quality SiC Crystals Using Si–Nd

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Promising Approach for Rapid Growth of High-Quality SiC Crystals Using Si–Nd–C Solutions

Published:2023-06-20 Issue:7 Volume:23 Page:5173-5180
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Li Peng¹,Lei Minpeng¹,Ma Wenhui¹,Guo Chao²,Mu Fengwen²,Lei Yun¹^ORCID

Affiliation:

1. Faculty of Metallurgical and Energy Engineering/National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming 650093, China

2. Innovative Semiconductor Substrate Technology Co., Ltd., Beijing 100020, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00409

Reference30 articles.

1. Silicon Carbide as a Platform for Power Electronics

2. Optimum semiconductors for high-power electronics

3. Investigation of growth processes of ingots of silicon carbide single crystals

4. Influence of interfacial energy on the growth of SiC single crystals from high temperature solutions

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Solution Components on Solvent Inclusion in SiC Solution Growth;Crystal Growth & Design;2024-02-02

2. Rapid Growth of High-Purity 3C-SiC Crystals Using a SiC-Saturated Si–Pr–C Solution;Crystal Growth & Design;2024-01-17

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