Effects of Al addition to Si-based flux on the growth of 4H-SiC films by vapour–liquid–solid pulsed laser deposition
Author:
Affiliation:
1. Department of Applied Chemistry
2. Tohoku University
3. Sendai
4. Japan
5. National Institute of Advanced Industrial Science and Technology
6. Ibaraki 305-8569
Abstract
High-speed growth of 4H-SiC films by VLS-PLD with Si/Al flux at a growth temperature lower than 1300 °C.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE00945C
Reference21 articles.
1. Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method
2. Investigation of growth processes of ingots of silicon carbide single crystals
3. Screening of metal flux for SiC solution growth by a thin-film combinatorial method
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