Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method-Reference-Cited by-同舟云学术

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Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method

Published:2014-05-02 Issue:6 Volume:7 Page:065501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yamamoto Yuji,Harada Shunta,Seki Kazuaki,Horio Atsushi,Mitsuhashi Takato,Koike Daiki,Tagawa Miho,Ujihara Toru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/7/i=6/a=065501/pdf

Reference22 articles.

1. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (>250 V) 4H-SiC p/sup +/-n junction diodes. I. DC properties

2. Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations

3. Growth and characterization of high-purity SiC single crystals

4. The status of SiC bulk growth from an industrial point of view

5. Growth of large high-quality SiC single crystals

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1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

3. Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth;Journal of Crystal Growth;2024-04

4. Effects of solution height and crystal rotation on the solution flow behavior in the top-seeded solution growth of SiC single crystals;CrystEngComm;2024

5. Optimization of Carbon Transport in Top-Seeded Solution Growth of Al-Doped Sic;2024

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