1. 4H-SiC MESFET's with 42 GHz f/sub max/
2. Large diameter 6H-SiC for microwave device applications
3. G. Pensl, V.V. Afanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier, W.J. Choyke, Silicon Carbide and Related Material 1995 Conference, Kyoto, Japan, Institute of Physics Conference Series, Vol. 142, IOP Publishing, Bristol, 1996, p. 275.
4. T. Troffer, Ch. Häβler, G. Pensl, Silicon Carbide and Related Material 1995 Conference, Kyoto, Japan, Institute of Physics Conference Series, Vol. 142, IOP Publishing, Bristol, 1996, p. 281.