Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions-Reference-Cited by-同舟云学术

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Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

Published:2014-09 Issue: Volume:401 Page:681-685
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mitani Takeshi,Komatsu Naoyoshi,Takahashi Tetsuo,Kato Tomohisa,Fujii Kuniharu,Ujihara Toru,Matsumoto Yuji,Kurashige Kazuhisa,Okumura Hajime

Funder

Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society

New Energy and Industrial Technology Development Organization

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth

2. High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth

3. Crystallinity Evaluation of 4H-SiC Single Crystal Grown by Solution Growth Technique Using Si-Ti-C Solution

4. Top-Seeded Solution Growth of 4H-SiC Bulk Crystal Using Si-Cr Based Melt

Cited by 59 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Achieving Rapid Synthesis of High-Purity SiC at 1923 K via a Liquid-State Reaction;ACS Sustainable Chemistry & Engineering;2024-08-05

2. Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds;Journal of Crystal Growth;2024-05

3. Novel application of high temperature solution growth method in simultaneously preparing SiC/Ti3SiC2/TiC using photovoltaic Si waste and Ti-bearing blast furnace slag;Journal of Cleaner Production;2024-04

4. Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC;Crystal Growth & Design;2024-03-06

5. Effect of Solution Components on Solvent Inclusion in SiC Solution Growth;Crystal Growth & Design;2024-02-02

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