Affiliation:
1. Sumitomo Metal Industries Ltd.
2. Toyota Motor Corporation
Abstract
Crystallinity of 4H-SiC bulk crystal obtained by solution growth technique was characterized mainly by KOH etching of the off-ground and serially ground specimen. Marked reduction of basal plane dislocation, threading edge and screw dislocations during the growth of on-axis crystal was confirmed. Cross-sectional TEM observation revealed the rapid reduction behavior of threading dislocations microscopically. AFM observation of as-grown morphology showed that screw dislocation dipoles is related to the reduction of threading screw dislocations and single domain formation, which is essential for establishing the high crystallinity.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
33 articles.
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