Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth
Author:
Affiliation:
1. Advanced Power Electronics Research Center (ADPERC)
2. National Institute of Advanced Industrial Science and Technology (AIST)
3. Tsukuba-shi
4. Japan
5. GaN Advanced Device Open Innovation Laboratory (GaN-OIL)
Abstract
We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth.
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE01473F
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