Partial decarboxylation of hafnium oxide clusters for high resolution lithographic applications-Reference-Cited by-同舟云学术

Partial decarboxylation of hafnium oxide clusters for high resolution lithographic applications

Published:2022 Issue:41 Volume:10 Page:15647-15655
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Liao Pin-Chia¹,Chen Po-Hsiung²,Tseng Yu-Fang¹,Shih Ting-An¹,Lin Ting-An¹,Gau Tsi-Sheng²³,Lin Burn-Jeng²⁴,Chiu Po-Wen²⁴,Liu Jui-Hsiung¹^ORCID

Affiliation:

1. Department of Chemistry and Frontier Research Center on Fundamental and Applied Science of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan

2. TSMC-NTHU Joint Research Center, Hsinchu, Taiwan

3. College of Semiconductor Research, National Tsing Hua University, Hsinchu, Taiwan, Republic of China

4. Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

Abstract

Treatment of hafnium clusters Hf6O4(OH)4(RCO2)12 with LiOH in DCM/H2O afforded Hf6O4(OH)6(RCO2)10, using which high resolution EUV lithographic patterns can be achieved.

Funder

Ministry of Science and Technology, Taiwan

Taiwan Semiconductor Manufacturing Company

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC02912J

Reference36 articles.

1. Beyond EUV lithography: a comparative study of efficient photoresists' performance

2. Review of recent advances in inorganic photoresists