Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography

Author:

Yuan Xiaodong1,Chen Jinping1,Yu Tianjun1,Zeng Yi1,Guo Xudong2,Wang Shuangqing2,Hu Rui2,Tian Peng3,Vockenhuber Michaela3,Kazazis Dimitrios3,Ekinci Yasin3,Zhao Jun4,Wu Yanqing4,Yang Guoqiang5,Li Yi1

Affiliation:

1. Chinese Academy of Sciences, Technical Institute of Physics and Chemistry, Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Beijing, China

2. University of Chinese Academy of Sciences, Beijing, China

3. Paul Scherrer Institute, Laboratory for X-Ray Nanoscience and Technologies, Villigen, Switzerland

4. Chinese Academy of Sciences, Advanced Research Institute, Shanghai Synchrotron Radiation Facility, Shanghai, China

5. Chinese Academy of Sciences, Key Laboratory of Photochemistry, Institute of Chemistry, Beijing, China

Publisher

SPIE-Intl Soc Optical Eng

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