Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy-Reference-Cited by-同舟云学术

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Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy

Published:2015 Issue:13 Volume:7 Page:5617-5623
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Choi Kyunghee,Raza Syed Raza Ali,Lee Hee Sung,Jeon Pyo Jin,Pezeshki Atiye,Min Sung-Wook,Kim Jin Sung,Yoon Woojin,Ju Sang-Yong,Lee Kimoon,Im Seongil

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR06707J

Reference41 articles.

1. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

2. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

3. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

4. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

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