Detailed work function and structural investigations of layered MoO3 onto SiO2 and MoS2 in air-Reference-Cited by-同舟云学术

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Detailed work function and structural investigations of layered MoO3 onto SiO2 and MoS2 in air

Published:2024-10 Issue: Volume:669 Page:160578
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sovizi Saeed^ORCID,Tosoni Sergio^ORCID,Zdunek Tomasz^ORCID,Szoszkiewicz Robert^ORCID

Funder

Narodowe Centrum Nauki

Publisher

Elsevier BV

Reference81 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides;Wang;Nat. Nanotechnol.,2012

2. Single-layer MoS2 transistors;Radisavljevic;Nat. Nanotechnol.,2011

3. Single atom doping in 2D layered MoS2 from a periodic table perspective;Sovizi;Surf. Sci. Rep.,2022

4. Developing seedless growth of atomically thin semiconductor layers: application to transition metal dichalcogenides;Rahmani Taji Boyuk;Ceram. Int.,2018

5. Plasma processing and treatment of 2D transition metal dichalcogenides: tuning properties and defect engineering;Sovizi;Chem. Rev.,2023

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