Facile interfacial defect healing in solution-processed In-Ga-Zn-O thin film transistor through rapid intense pulsed light annealing-Reference-Cited by-同舟云学术

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Facile interfacial defect healing in solution-processed In-Ga-Zn-O thin film transistor through rapid intense pulsed light annealing

Published:2024-01 Issue: Volume:44 Page:103751
ISSN:2468-0230
Container-title:Surfaces and Interfaces
language:en
Short-container-title:Surfaces and Interfaces

Author:

Kim Hyun Jae,Lee Kimoon,Han Chul Jong,Yoo Byungwook,Bang Joonho,Kim Se Yun,Im Seongil,Lee Kyu Hyoung,Oh Min Suk

Funder

Ministry of Science, ICT and Future Planning

Korea Institute for Advancement of Technology

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference41 articles.

1. Oxide semiconductor thin-film transistors: a review of recent advances;Fortunato;Adv. Mater.,2012

2. Quantum-dot light-emitting diodes for large-area displays: towards the dawn of commercialization;Dai;Adv. Mater.,2017

3. Advances in solution-processed OLEDs and their prospects for use in displays;Woo;Adv. Mater.,2023

4. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012

5. Mini-LED, Micro-LED and OLED displays: present status and future perspectives;Huang;Light Sci Appl.,2020

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