Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design-Reference-Cited by-同舟云学术

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Published:2024 Issue:15 Volume:26 Page:11582-11588
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Xu Lijun¹²^ORCID,Luo Kun¹²,Zhan Guohui¹²,Liu Jiangtao³^ORCID,Wu Zhenhua¹²^ORCID

Affiliation:

1. The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2. School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Physics and Mechatronic Engineering, Guizhou Minzu University, Guizhou, China

Abstract

The study aimed to investigate the impact of random fluctuations in Schottky barrier formation at polar interfaces between InGaZnO4 (IGZO) and different metals, particularly in the context of device miniaturization.

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D3CP06131K

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