Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors-Reference-Cited by-同舟云学术

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Published:2010-06-28 Issue:26 Volume:96 Page:263509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nomura Kenji,Aoki Takashi,Nakamura Kiyoshi,Kamiya Toshio,Nakanishi Takashi,Hasegawa Takayuki,Kimura Mutsumi,Kawase Takeo,Hirano Masahiro,Hosono Hideo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3458799

Reference17 articles.

1. Amorphous silicon thin-film transistors on steel foil substrates

2. Organic crystals at large

3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

4. Wafer Level 3-D ICs Process Technology

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