Affiliation:
1. Division of Nanotechnology, DGIST, 42988, South Korea
Abstract
Al/a-InGaZnOx/AlOx/Al devices exhibiting gradual memristive switching, facilitated by oxygen vacancies within the active and interfacial layers, with long current level retentions are potential candidates for neuromorphic computing applications.
Funder
Daegu Gyeongbuk Institute of Science and Technology
Ministry of Science and ICT, South Korea
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Cited by
7 articles.
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