Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition-Reference-Cited by-同舟云学术

Cationic compositional effects on the bias-stress stabilities of thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Published:2019 Issue:20 Volume:7 Page:6059-6069
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ko Seung-Bo¹²³⁴^ORCID,Seong Nak-Jin⁵⁶⁴,Choi Kyujeong⁵⁶⁴,Yoon So-Jung¹²³⁴,Choi Se-Na¹²³⁴,Yoon Sung-Min¹²³⁴^ORCID

Affiliation:

1. Department of Advanced Materials Engineering for Information and Electronics

2. Kyung Hee University

3. Yongin

4. Korea

5. NCD Co., Ltd

6. Daejeon 34015

Abstract

Cationic compositional effects of amorphous In–Ga–Zn–O (a-IGZO) prepared by atomic layer deposition (ALD) were strategically investigated for thin film transistor applications.

Funder

Korea Evaluation Institute of Industrial Technology

Samsung

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01164A

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