Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates-Reference-Cited by-同舟云学术

Investigation of coherency stress-induced phase separation in AlN/AlxGa1−xN superlattices grown on sapphire substrates

Published:2020 Issue:18 Volume:22 Page:3198-3205
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Yao Weizhen¹²³⁴⁵^ORCID,Li Fangzheng¹²³⁴⁵,Wang Lianshan¹²³⁴⁵,Liu Sheng⁶⁷⁸⁹⁵,Wei Hongyuan¹²³⁴⁵,Yang Shaoyan¹²³⁴⁵,Wang Zhanguo¹²³⁴⁵^ORCID

Affiliation:

1. Key Laboratory of Semiconductor Materials Science, and

2. Beijing Key Laboratory of Low Dimensional Semiconductor, Materials and Devices

3. Institute of Semiconductors, Chinese Academy of Sciences

4. Beijing 100083

5. People's Republic of China

6. Research Center of Electronic Manufacturing and Packaging Integration

7. School of Power and Mechanical Engineering

8. Wuhan University

9. Wuhan 430072

Abstract

Suppression of compositional non-uniformity in Al_xGa_1−xN layers by using AlN/Al_xGa_1−xN superlattices through adjusting stresses in AlN/Al_xGa_1−xN layers is demonstrated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00147C

Reference41 articles.

1. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

2. Efficient InGaN-based yellow-light-emitting diodes

3. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate

4. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management

5. Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices

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