Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

Abstract

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.