Fabrication of thin film transistor using magnesium zinc oxide (MgZnO) as a semiconductor layer by magnetron sputtering technique-Reference-Cited by-同舟云学术

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Fabrication of thin film transistor using magnesium zinc oxide (MgZnO) as a semiconductor layer by magnetron sputtering technique

Published:2019-02 Issue:1 Volume:20 Page:95-98
ISSN:1229-9162
Container-title:Journal of Ceramic Processing Research
language:en
Short-container-title:

Author:

Amuthasurabi.M

Publisher

Ceramic Research Institute

Subject

Ceramics and Composites

Reference34 articles.

1. Effect of channel thickness on the field effect mobility of ZnO-TFT fabricated by sol gel process

2. High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

3. Effects of channel layer thickness and time on the electrical characteristics of ZnO: (Li, N) TFT

4. Transistor Characteristics of Zinc Oxide Active Layers at Various Zinc Acetate Dihydrate Solution Concentrations of Zinc Oxide Thin-film

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Acquisition, Properties, and Application of Nanosized Magnesium Oxide Powders: An Overview;Theoretical Foundations of Chemical Engineering;2021-11

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