High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics-Reference-Cited by-同舟云学术

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High-Mobility ZnO Thin Film Transistors Based on Solution-processed Hafnium Oxide Gate Dielectrics

Published:2014-11-10 Issue:1 Volume:25 Page:134-141
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Esro Mazran¹,Vourlias George²,Somerton Christopher³,Milne William I.⁴⁵,Adamopoulos George¹

Affiliation:

1. Engineering Department; Lancaster University; Lancaster LA1 4YR UK

2. Physics Department; Aristotle University of Thessaloniki; Thessaloniki 54142 Greece

3. Quantum Technology Centre; Department of Physics; University of Lancaster; LA1 4YW UK

4. Department of Engineering; University of Cambridge; 9 JJ Thomson Avenue Cambridge CB3 0FA UK

5. Kyung Hee University; Display Research Laboratory; Department of Information Display; Seoul 130701 South Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference55 articles.

1. A ferroelectric transparent thin‐film transistor

2. ZnO-based transparent thin-film transistors

3. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

4. Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs

5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

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1. Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric;Nature Electronics;2024-03-01

2. Solution-processed transparent PVP:HfO2 hybrid dielectric films with low leakage current density and high k;Surfaces and Interfaces;2023-11

3. Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor;Nanomaterials;2023-08-25

4. High Performance and High Yield Solution Processed IGZO Thin Film Transistors Fabricated with Low‐Temperature Annealed Hafnium Dioxide Gate Dielectric;Advanced Electronic Materials;2023-08-11

5. Fabrication and Characteristics of a Zinc Oxide Tunnel Effect Transistor with High Current Output;Journal of Electronic Materials;2023-08-08

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