Fabrication and Characteristics of a Zinc Oxide Tunnel Effect Transistor with High Current Output-Reference-Cited by-同舟云学术

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Fabrication and Characteristics of a Zinc Oxide Tunnel Effect Transistor with High Current Output

Published:2023-08-08 Issue:10 Volume:52 Page:6911-6918
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Ge Qicai,Zhu Min,Gao Xiaoting,Zhao Yan,Feng Gaoxu

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s11664-023-10620-6.pdf

Reference15 articles.

1. M. Lee, J.W. Jo, Y.J. Kim, S. Choi, S.M. Kwon, S.P. Jeon, A. Facchetti, Y.H. Kim, and S.K. Park, Corrugated heterojunction metal-oxide thin-film transistors with high electron mobility via vertical interface manipulation. Adv. Mater. 30, e1804120 (2018).

2. C.W. Shih, A. Chin, C.F. Lu, and W.F. Su, Remarkably high hole mobility metal-oxide thin-film transistors. Sci. Rep. 8, 889 (2018).

3. A. Abliz, X. Xue, X. Liu, G. Li, and L. Tang, Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors. Appl. Phys. Lett. 118, 123504 (2021).

4. Y. Kang, W. Lee, J. Kim, K. Keum, S.-H. Kang, J.-W. Jo, S.K. Park, and Y.-H. Kim, Effects of crystalline structure of IGZO thin films on the electrical and photo-stability of metal-oxide thin-film transistors. Mater. Res. Bull. 139, 111252 (2021).

5. J.H. Kim, D.-S. Kim, S.-K. Kim, Y.-Z. Yoo, J.H. Lee, S.-W. Kim, and T.-Y. Seong, Formation of flexible and transparent indium gallium zinc oxide/Ag/indium gallium zinc oxide multilayer film. J. Electron. Mater. 45, 4265 (2016).

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