Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors-Reference-Cited by-同舟云学术

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Rational design of hydrogen and nitrogen co-doped ZnO for high performance thin-film transistors

Published:2021-03-22 Issue:12 Volume:118 Page:123504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Abliz Ablat¹^ORCID,Xue Xiongxiong²³,Liu Xingqiang²^ORCID,Li Guoli²^ORCID,Tang Liming²^ORCID

Affiliation:

1. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China

2. Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education & International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, China

3. School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0038416

Reference30 articles.

1. Metal oxides for optoelectronic applications

2. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

3. Plasma-Assisted Approaches in Inorganic Nanostructure Fabrication

4. Hydrogen behavior under X-ray irradiation for a-IGZO thin film transistors

5. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

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