Solution processed F doped ZnO (ZnO:F) for thin film transistors and improved stability through co-doping with alkali metals
Author:
Affiliation:
1. Department of Chemistry
2. National University of Singapore
3. Singapore
4. Department of Electrical and Computer Engineering
5. Singapore 119260
6. Institute of Materials Research and Engineering
7. A*STAR
8. Singapore 117602
Abstract
FETs based on ZnO doped with F and alkali metals showed largely improved charge carrier mobility, shelf-life stability and bias stress stability.
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC02257B
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4. A comprehensive review of ZnO materials and devices
5. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering
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