Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks
Author:
Funder
NSFC
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4868387
Reference17 articles.
1. Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
2. A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
3. Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory
4. Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals
5. Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
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