AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing

Author:

Kao Wei-Chung1234ORCID,Lee Wei-Hao1234,Yi Sheng-Han1234,Shen Tsung-Han1234,Lin Hsin-Chih1234,Chen Miin-Jang1234

Affiliation:

1. Department of Materials Science and Engineering

2. National Taiwan University

3. Taipei 10617

4. Taiwan

Abstract

The schematic diagram of the processing cycle including the atomic layer annealing (ALA) to achieve low-temperature epitaxial growth of AlN on SiC.

Funder

Taiwan Semiconductor Manufacturing Company

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Reference33 articles.

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5. Microstructure of low temperature grown AlN thin films on Si(111)

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