Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing-Reference-Cited by-同舟云学术

Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing

Published:2018 Issue:32 Volume:20 Page:4623-4629
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ben Jianwei¹²³⁴⁵,Sun Xiaojuan¹²³⁴,Jia Yuping¹²³⁴,Jiang Ke¹²³⁴⁵,Shi Zhiming¹²³⁴,Liu Henan¹²³⁴,Wang Yong¹²³⁴⁵,Kai Cuihong¹²³⁴⁵,Wu You¹²³⁴⁵,Li Dabing¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

3. Changchun 130033

4. People's Republic of China

5. University of Chinese Academy of Sciences

Abstract

In this work, we studied the mechanism of defects evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing.

Funder

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE00770E

Reference37 articles.

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4. Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

5. Advances and prospects in nitrides based light-emitting-diodes

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