High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

Published:2020 Issue:3 Volume:8 Page:883-888
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Yuan¹²³⁴,Xing Zhiheng¹²³⁴,Zheng Yulin¹²³⁴,Tang Xin¹²³⁴,Xie Wentong⁵⁶⁴,Chen Xiaofeng⁵⁶⁴,Wang Wenliang¹²³⁴⁵^ORCID,Li Guoqiang¹²³⁴⁵^ORCID

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510641

4. China

5. Guangdong Choicore Optoelectronics Co., Ltd

6. Heyuan 517003

Abstract

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

Funder

Natural Science Foundation of Guangdong Province

National Natural Science Foundation of China

National Basic Research Program of China

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC06138J

Reference34 articles.

1. 13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

2. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

3. Auger recombination in AlGaN quantum wells for UV light-emitting diodes

4. Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices

5. GaN/AlGaN multiple quantum wells grown on transparent and conductive (-201)-oriented β-Ga2O3 substrate for UV vertical light emitting devices

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties;Materials Letters;2024-12

2. Narrow-band n-GaN/n-Si isotype heterojunction photodiode: A simplified approach for photodiode development;Sensors and Actuators A: Physical;2024-08

3. A Review of Light-Emitting Diodes and Ultraviolet Light-Emitting Diodes and Their Applications;Photonics;2024-05-22

4. Principles and Research Progress on LEDs;Handbook of Optical Wireless Communication;2024

5. Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction;Digest Journal of Nanomaterials and Biostructures;2023-12-20