13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications-Reference-Cited by-同舟云学术

13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

Published:2019 Issue:1 Volume:7 Page:143-152
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Khan M. Ajmal¹²³⁴^ORCID,Maeda Noritoshi¹²³⁴,Jo Masafumi¹²³⁴,Akamatsu Yuki⁵⁶⁷⁴,Tanabe Ryohei⁵⁶⁷⁴,Yamada Yoichi⁵⁶⁷⁴,Hirayama Hideki¹²³⁴

Affiliation:

1. Quantum Optodevice Laboratory

2. RIKEN

3. Saitama

4. Japan

5. Faculty of Engineering

6. Yamaguchi University

7. Yamaguchi

Abstract

Smart, high-power ultraviolet (UV)-B light-emitting diodes (LEDs) are demanded for real world applications, including vitamin D3 production in human skin (295–304 nm), immunotherapy (310 nm) and enriching phytochemicals in plants (310 nm).

Funder

New Energy and Industrial Technology Development Organization

RIKEN

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC03825B

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