A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep24448.pdf
Reference41 articles.
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2. Camacho-Mojica, D. C. & López-Urías, F. GaN haeckelite single-layered nanostructures: monolayer and nanotubes. Sci. Rep. 5, 17902 (2015).
3. Wei, T. et al. Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography. Appl. Phys. Lett. 101, 211111 (2012).
4. Wang, W., Yang, W., Wang, H. & Li, G. Epitaxial growth of GaN films on unconventional oxide substrates. J. Mater. Chem. C 2, 9342–9358 (2014).
5. Ra, Y.-H., Navamathavan, R., Park, J.-H. & Lee, C.-R. Radial growth behavior and characteristics of m-plane In0.16Ga0.84N/GaN MQW nanowires by MOCVD. CrystEngComm 15, 1874–1881 (2013).
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