Epitaxial growth of GaN films on unconventional oxide substrates-Reference-Cited by-同舟云学术

Epitaxial growth of GaN films on unconventional oxide substrates

Published:2014 Issue:44 Volume:2 Page:9342-9358
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Wenliang¹²³,Yang Weijia¹²³,Wang Haiyan¹²³,Li Guoqiang¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescent Materials and Devices

2. South China University of Technology

3. Guangzhou 510640, China

4. Department of Electronic Materials

5. School of Materials Science and Engineering

Abstract

The unconventional oxide substrates have been used for the growth of high-quality GaN films due to their relatively small lattice and thermal expansion coefficient mismatches with GaN. This review focuses on the recent progress and discusses the perspectives of the epitaxial growth of GaN films on unconventional oxide substrates.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC01655F

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