Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography-Reference-Cited by-同舟云学术

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Selectively grown photonic crystal structures for high efficiency InGaN emitting diodes using nanospherical-lens lithography

Published:2012-11-19 Issue:21 Volume:101 Page:211111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wei Tongbo,Wu Kui,Lan Ding,Yan Qingfeng,Chen Yu,Du Chengxiao,Wang Junxi,Zeng Yiping,Li Jinmin

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767334

Reference16 articles.

1. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays

2. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

3. Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

4. III-nitride blue and ultraviolet photonic crystal light emitting diodes

5. Output power enhancement of light-emitting diodes via two-dimensional hole arrays generated by a monolayer of microspheres

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