Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode-Reference-Cited by-同舟云学术

Improving the Performance of Free-pGaN Deep-Ultraviolet Light-Emitting Diodes by Embedding Self-Assembled Ni Nanoparticles Between p-AlGaN/p-Electrode

Published:2023-12 Issue:12 Volume:70 Page:6410-6414
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jia Tong¹,Wang Bing²,Zhang Gai¹,Chu Chunshuang¹^ORCID,Fan Chao¹^ORCID,Zhang Yonghui¹^ORCID,E Wenwen¹,Liu Naixin²,Zhang Zi-Hui¹^ORCID,Yan Jianchang³

Affiliation:

1. School of Electronics and Information Engineering, State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Beichen, China

2. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

3. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanxi Provincial Key Research and Development Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10299613.pdf?arnumber=10299613