Author:
Kanazawa Toru,Amemiya Tomohiro,Ishikawa Atsushi,Upadhyaya Vikrant,Tsuruta Kenji,Tanaka Takuo,Miyamoto Yasuyuki
Publisher
Springer Science and Business Media LLC
Reference34 articles.
1. Dennard, R. H. et al. Design of ion-implanted MOSFET’s with very small physical dimensions. IEEE J. Solid-State Circuits SC-9, 256–268 (1974).
2. Fjeldly, T. A. & Shur, M. Threshold Voltage Modeling and the Subthreshold Regime of Operation of Short-Channerl MOSFETs. IEEE Trans. Electron Devices 40, 137–143 (1993).
3. Uchida, K. & Takagi, S. Carrier scattering induced by thickness fluctuation of silicon-on-insulator film in ultrathin-body metal–oxide–semiconductor field-effect transistor. Appl. Phys. Lett. 82, 2916–2918 (2003).
4. Kim, S. H. et al. Experimental study on electron mobility in InxGa1–xAs-on-insulator metal–oxide–semiconductor field-effect transistors with in content modulation and MOS interface buffer engineering. IEEE Trans. Nanotechnology 12, 621–628 (2013).
5. Lee, C. H. et al. Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors. Appl. Phys. Lett. 102, 232107 (2013).
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