A partly-contacted epitaxial lateral overgrowth method applied to GaN material
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep23842.pdf
Reference27 articles.
1. Nam, O. H., Bremser, M. D., Zheleva, T. S. & Davis, R. F. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy. Appl. Phys. Lett. 71, 2638–2640 (1997).
2. Zheleva, T. S., Nam, O. H., Bremser, M. D. & Davis, R. F. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures. Appl. Phys. Lett. 71, 2472–2474 (1997).
3. Marchand, H. et al. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 73, 747–749 (1998).
4. Chakraborty, A. et al. Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak. Appl. Phys. Lett. 85, 5143–5145 (2004).
5. Gibart, P. Metal organic vapour phase epitaxy of GaN and lateral overgrowth. Rep. Prog. Phys. 67, 667–715 (2004).
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