Author:
Wei C. Y.,Shen B.,Ding P.,Han P.,Li A. D.,Xia Y. D.,Xu B.,Yin J.,Liu Z. G.
Publisher
Springer Science and Business Media LLC
Reference36 articles.
1. Hwang, J. R. et al. 20 nm gate bulk-finFET SONOS flash. Tech. Dig. Int. Electron Devices Meet. 161 (2005).
2. Lee, C. H. et al. A Novel SONOS Structure of SiO2/SiN/A12O3 with TaN metal gate for multi-giga bit flash memeries. Tech. Dig. Int. Electron Devices Meet 613 (2003).
3. Chen, W. et al. Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application. Appl. Phys. Lett. 91, 022908 (2007).
4. Lee, C. H. et al. Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high-density flash memory. Appl. phys. Lett. 86, 152908 (2005).
5. Zhao, C., Zhao, C. Z., Taylor, S. & Chalker, P. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. Materials 7, 5117–5145 (2014).
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