Author:
Petkov Alexander,Mishra Abhishek,Cattelan Mattia,Field Daniel,Pomeroy James,Kuball Martin
Abstract
AbstractHeterostructures of Ga$$_2$$
2
O$$_3$$
3
with other materials such as Si, SiC or diamond, are a possible way of addressing the low thermal conductivity and lack of p-type doping of Ga$$_2$$
2
O$$_3$$
3
for device applications, as well as of improving device reliability. In this work we study the electrical and thermal properties of Ga$$_2$$
2
O$$_3$$
3
–SiO$$_2$$
2
heterostructures. Here, thin-film gallium oxide with thickness ranging between 8 and 30 nm was deposited onto a silicon substrate with a thermal oxide by means of oxidised liquid gallium layer delamination. The resulting heterostructure is then characterised by means of X-ray photoelectron spectroscopy and transient thermoreflectance. The thin-film gallium oxide valence band offset with respect to the SiO$$_2$$
2
is measured as 0.1 eV and predicted as $$-2.3$$
-
2.3
eV with respect to diamond. The thin-film’s out-of-plane thermal conductivity is determined to be 3 ±0.5 Wm$$^{-1}$$
-
1
K$$^{-1}$$
-
1
, which is higher than what has been previously measured for other polycrystalline Ga$$_2$$
2
O$$_3$$
3
films of comparable thickness.
Funder
Engineering and Physical Sciences Research Council
Royal Academy of Engineering
Publisher
Springer Science and Business Media LLC
Cited by
6 articles.
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