Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-05010-y.pdf
Reference40 articles.
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3. Zhao, J. H., Alexandrov, P., Zhang, J. H. & Li, X. Q. Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-emplanted vertical junction FET. IEEE Electron Device Lett 25, 474–476 (2004).
4. Wang, X. K. & Cooper, J. A. High-voltage n-channel IGBTs on free-standing 4H-SiC epilayers. IEEE Trans. Electron Devices 57, 511–515 (2010).
5. Kojima, K. et al. Influence of stacking faults on the performance of 4H-SiC Schottky barrier diodes fabricated on (112–0) face. Appl. Phys. Lett. 81, 2974–2976 (2002).
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