Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1512956
Reference11 articles.
1. 1.1 kV 4H-SiC power UMOSFETs
2. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
3. Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face
4. Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
5. Performance limiting micropipe defects in silicon carbide wafers
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1. Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults;Solid State Phenomena;2024-08-26
2. Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults;Applied Physics Letters;2023-08-14
3. Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers;Crystal Research and Technology;2018-08-15
4. Extension, Closure and Conversion of In-Grown Stacking Faults in 4H-SiC Epilayers;Materials Science Forum;2018-06
5. Characteristic Luminescence Correlated with Leaky Diamond Schottky Barrier Diodes;physica status solidi (a);2017-08-23
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