Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers-Reference-Cited by-同舟云学术

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Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers

Published:2018-08-15 Issue:9 Volume:53 Page:1700234
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Li Zhe¹²^ORCID,Zhang Li-Guo¹,Zhang Ze-Hong¹,Ju Tao¹,Zhang Xuan¹^ORCID,Zhang Bao-Shun¹

Affiliation:

1. Suzhou Institute of Nano-Tech and Nano-Bionics; Chinese Academy of Sciences; Suzhou 215123 China

2. University of Chinese Academy of Sciences; Beijing 100049 China

Funder

Key Technology Research and Development Program of Jiangsu Province

Natural Science Foundation of Jiangsu Province

Instrument Developing Project of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/crat.201700234/fullpdf

Reference42 articles.

1. Influence of stacking faults on the performance of 4H–SiC Schottky barrier diodes fabricated on (112̄0) face

2. Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

3. Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

4. Photoluminescence of Frank-type defects on the basal plane in 4H–SiC epilayers

5. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions

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1. Periodic solutions of nonlinear differential systems by the method of averaging;Applications of Mathematics;2020-06-30

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